Security News > 2020 > February > Samsung introduces high-performing DRAM, helps advance supercomputers, AI-driven data analytics

Samsung announced the market launch of Flashbolt, its third-generation High Bandwidth Memory 2E. The new 16-gigabyte HBM2E is uniquely suited to maximize high performance computing systems and help system manufacturers to advance their supercomputers, AI-driven data analytics and state-of-the-art graphics systems in a timely manner.

"With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics.

Samsung's Flashbolt provides a highly reliable data transfer speed of 3.2 gigabits per second by leveraging a proprietary optimized circuit design for signal transmission, while offering a memory bandwidth of 410GB/s per stack.

Samsung's HBM2E can also attain a transfer speed of 4.2Gbps, the maximum tested data rate to date, enabling up to a 538GB/s bandwidth per stack in certain future applications.

Samsung expects to begin volume production during the first half of this year.

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