Security News

Boasting a bucketload of benefits, including the obligatory speed and storage increases, DDR5 will eventually take its place as the memory option of choice. The JESD79-5 DDR5 SDRAM specification signaled the transition to DDR5, with significant improvements in capacity, speed, voltage, and ECC functions.

Samsung announced that it has expanded its DDR5 DRAM memory portfolio with the 512GB DDR5 module based on High-K Metal Gate process technology. "Samsung is the only semiconductor company with logic and memory capabilities and the expertise to incorporate HKMG logic technology into memory product development," said Young-Soo Sohn, Vice President of the DRAM Memory Planning/Enabling Group at Samsung Electronics.

Innodisk is announcing new PCIe Gen 4 NVMe flash storage, DDR4-3200 DRAM, and CANbus & LAN modules. Innodisk's NVMe flash storage series now supports the latest PCIe Gen 4 interface with a staggering 7.88 GB/s transfer rate-double the bandwidth of Gen 3-that simultaneously lowers overall power consumption, reducing the overheating issues of many PCIe SSDs. Smart temperature control through thermal throttling firmware technology is convenient for users to monitor temperature changes of SSDs at any time, and protect data with higher performance.

Taiwanese chip-maker United Microelectronics Corporation will plead guilty to theft of trade secrets from Micron Technologies and pay a $60m fine to the USA. The case was brought in 2018 when the US Department of Justice alleged that UMC and Chinese outfit Fujian Jinhua Integrated Circuit conspired to steal Micron's DRAM technology, including details of manufacturing processes, in order to start their own DRAM business. The DoJ acted against UMC under its "Initiative to Combat Chinese Economic Espionage", a Trump administration programme that aims to protect American intellectual property and lets the US government enforce forfeitures and fines.

Remember rowhammer vulnerability? A critical issue affecting modern DRAM chips that could allow attackers to obtain higher kernel privileges on a targeted system by repeatedly accessing memory cells and induce bit flips. To mitigate Rowhammer vulnerability on the latest DDR4 DRAM, many memory chip manufacturers added some defenses under the umbrella term Target Row Refresh that refreshes adjacent rows when a victim row is accessed more than a threshold.

Remember rowhammer vulnerability? A critical issue affecting modern DRAM chips that could allow attackers to obtain higher kernel privileges on a targeted system by repeatedly accessing memory cells and induce bit flips. To mitigate Rowhammer vulnerability on the latest DDR4 DRAM, many memory chip manufacturers added some defenses under the umbrella term Target Row Refresh that refreshes adjacent rows when a victim row is accessed more than a threshold.

Samsung announced the market launch of Flashbolt, its third-generation High Bandwidth Memory 2E. The new 16-gigabyte HBM2E is uniquely suited to maximize high performance computing systems and help system manufacturers to advance their supercomputers, AI-driven data analytics and state-of-the-art graphics systems in a timely manner. "With the introduction of the highest performing DRAM available today, we are taking a critical step to enhance our role as the leading innovator in the fast-growing premium memory market," said Cheol Choi, executive vice president of Memory Sales & Marketing at Samsung Electronics.

Boffins blast boards to boost bits Bit boffins from Australia, Austria, and the US have expanded upon the Rowhammer memory attack technique to create more dangerous variation called RAMBleed that...

Last week, we reported about the first network-based remote Rowhammer attack, dubbed Throwhammer, which involves the exploitation a known vulnerability in DRAM through network cards using remote...