Security News > 2021 > March > Samsung expands its DDR5 DRAM memory portfolio with the 512GB DDR5 module based on HKMG

Samsung announced that it has expanded its DDR5 DRAM memory portfolio with the 512GB DDR5 module based on High-K Metal Gate process technology.

"Samsung is the only semiconductor company with logic and memory capabilities and the expertise to incorporate HKMG logic technology into memory product development," said Young-Soo Sohn, Vice President of the DRAM Memory Planning/Enabling Group at Samsung Electronics.

"Intel's engineering teams closely partner with memory leaders like Samsung to deliver fast, power-efficient DDR5 memory that is performance-optimized and compatible with our upcoming Intel Xeon Scalable processors, code-named Sapphire Rapids."

Samsung's DDR5 will utilize highly advanced HKMG technology that has been traditionally used in logic semiconductors.

The HKMG process was adopted in Samsung's GDDR6 memory in 2018 for the first time in the industry.

Leveraging through-silicon via technology, Samsung's DDR5 stacks eight layers of 16Gb DRAM chips to offer the largest capacity of 512GB. TSV was first utilized in DRAM in 2014 when Samsung introduced server modules with capacities up to 256GB. Samsung is currently sampling different variations of its DDR5 memory product family to customers for verification and, ultimately, certification with their leading-edge products to accelerate AI/ML, exascale computing, analytics, networking, and other data-intensive workloads.

News URL

http://feedproxy.google.com/~r/HelpNetSecurity/~3/IKUBtlsccM0/